PS21963-4ES Datasheet, PDF (8/8 Pages) Mitsubishi Electric Semiconductor – 600V/8A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion

MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21963-4ES
TRANSFER-MOLD TYPE
INSULATED TYPE
Fig. 6 AN EXAMPLE OF TYPICAL DIP-IPM APPLICATION CIRCUIT
C1: Electrolytic capacitor with good temperature characteristics C2,C3: 0.22~2µF R-category ceramic capacitor for noise filtering
C2 C1 C2 C1 C2 C1
VUFB
VVFB
VWFB
HVIC
VP1
VCC
VUB
C3
UP
UP
UOUT
VUS
DIP-IPM
P
Bootstrap negative electrodes
should be connected to U, V,
W terminals directly and
separated from the main output
wires.
U
VVB
VP
VP
VOUT
VVS
V
M
VWB
WP
WP ^WOUT
VNC
W
COM VWS
LVIC
UOUT
VN1
NU
VCC
5V line C3
UN
VN
WN
Fo
VNC
UN
VN
WN
Fo
GND
VOUT
WOUT
CIN
VNO
NV
NW
Long wiring here might
C
cause short-circuit.
CIN
15V line
Long GND wiring here might
generate noise to input and
cause IGBT malfunction.
Long wiring here might cause
SC level fluctuation and
malfunction.
A
OR Logic
+
B R1
- Vref ^C4
B R1
+
- Vref ^C4
+
B R1
- Vref ^C4
Comparator
Shunt resistors
N1
External protection circuit
Note 1 : Input drive is High-Active type. There is a 3.3kΩ(min.) pull-down resistor integrated in the IC input circuit. To prevent malfunction, the wiring of each in-
put should be as short as possible. When using RC coupling circuit, make sure the input signal level meet the turn-on and turn-off threshold voltage.
2 : Thanks to HVIC inside the module, direct coupling to MCU without any opto-coupler or transformer isolation is possible.
3 : FO output is open drain type. It should be pulled up to the positive side of a 5V power supply by a resistor of about 10kΩ.
4 : To prevent erroneous protection, the wiring of A, B, C should be as short as possible.
5 : The time constant R1C4 of the protection circuit should be selected in the range of 1.5-2µs. SC interrupting time might vary with the
wiring pattern. Tight tolerance, temp-compensated type is recommended for R1, C4.
6 : All capacitors should be mounted as close to the terminals of the DIP-IPM as possible. (C1: good temperature, frequency character-
istic electrolytic type, and C2, C3: good temperature, frequency and DC bias characteristic ceramic type are recommended.)
7 : To prevent surge destruction, the wiring between the smoothing capacitor and the P, N1 terminals should be as short as possible.
Generally a 0.1-0.22µF snubber between the P-N1 terminals is recommended.
8 : Two VNC terminals (9 & 16 pin) are connected inside DIP-IPM, please connect either one to the 15V power supply GND outside and
leave another one open.
9 : It is recommended to insert a Zener diode (24V/1W) between each pair of control supply terminals to prevent surge destruction.
10 : If control GND is connected to power GND by broad pattern, it may cause malfunction by power GND fluctuation. It is recommended
to connect control GND and power GND at only a point.
11 : The reference voltage Vref of comparator should be set up the same rating of short circuit trip level (Vsc(ref): min.0.43V to max.0.53V).
12 : OR logic output high level should exceed the maximum short circuit trip level (Vsc(ref): max.0.53V).
Mar. 2007
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