PS21963-4ES Datasheet, PDF (4/8 Pages) Mitsubishi Electric Semiconductor – 600V/8A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion

MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21963-4ES
TRANSFER-MOLD TYPE
INSULATED TYPE
MECHANICAL CHARACTERISTICS AND RATINGS
Parameter
Condition
Limits
Unit
Min.
Typ.
Max.
Mounting torque
Weight
Heat-sink flatness
Mounting screw : M3
Recommended : 0.69 N·m 0.59
—
0.78 N·m
(Note 6)
—
10
—
g
(Note 7) –50
—
100
µm
Note 6 : Plain washers (ISO 7089~7094) are recommended.
Note 7: Flatness measurement position
Measurement position
+–
4.6mm
Heat sink side
–
+
DIP-IPM
Heat sink side
RECOMMENDED OPERATION CONDITIONS
Symbol
Parameter
Condition
Limits
Min.
Typ.
VCC
Supply voltage
Applied between P-NU, NV, NW
0
300
VD
Control supply voltage
Applied between VP1-VNC, VN1-VNC
13.5 15.0
VDB
Control supply voltage
∆VD, ∆VDB Control supply variation
tdead
Arm shoot-through blocking time
fPWM
PWM input frequency
IO
Allowable r.m.s. current
Applied between VUFB-U, VVFB-V, VWFB-W
For each input signal, TC ≤ 100°C
TC ≤ 100°C, Tj ≤ 125°C
VCC = 300V, VD = VDB = 15V,
P.F = 0.8, sinusoidal PWM,
Tj ≤ 125°C, TC ≤ 100°C
fPWM = 5kHz
(Note 8) ^{fPWM = 15kHz}
13.0
–1
1.5
—
—
—
15.0
—
—
—
—
—
PWIN(on) Allowable minimum input
PWIN(off) ^{pulse width}
0.5
—
(Note 9) 0.5
—
VNC
VNC variation
Between VNC-NU, NV, NW (including surge)
–5.0
—
Note 8 : The allowable r.m.s. current value depends on the actual application conditions.
9 : IPM might not make response if the input signal pulse width is less than the recommended minimum value.
Max.
400
16.5
18.5
1
—
20
4.0
2.5
—
—
5.0
Unit
V
V
V
V/µs
µs
kHz
Arms
µs
V
Mar. 2007
4