PS21963-4ES Datasheet, PDF (3/8 Pages) Mitsubishi Electric Semiconductor – 600V/8A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion

MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21963-4ES
TRANSFER-MOLD TYPE
INSULATED TYPE
THERMAL RESISTANCE
Symbol
Parameter
Condition
Limits
Min.
Typ.
Max. ^Unit
Rth(j-c)Q
Rth(j-c)F
Junction to case thermal
Inverter IGBT part (per 1/6 module)
resistance
(Note 3) Inverter FWD part (per 1/6 module)
—
—
4.1 °C/W
—
—
5.4 °C/W
Note 3 : Grease with good thermal conductivity should be applied evenly with about +100µm~+200µm on the contacting surface of DIP-IPM
and heat-sink.
The contacting thermal resistance between DIP-IPM case and heat sink (Rth(c-f)) is determined by the thickness and the thermal
conductivity of the applied grease. For reference, Rth(c-f) (per 1/6 module) is about 0.3°C/W when the grease thickness is 20µm and
the thermal conductivity is 1.0W/m·k.
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
Parameter
VCE(sat)
VEC
ton
trr
tc(on)
toff
tc(off)
ICES
Collector-emitter saturation
voltage
FWD forward voltage
Switching times
Collector-emitter cut-off
current
Condition
VD = VDB = 15V
IC = 8A, Tj = 25°C
VIN = 5V
IC = 8A, Tj = 125°C
Tj = 25°C, –IC = 8A, VIN = 0V
VCC = 300V, VD = VDB = 15V
IC = 8A, Tj = 125°C, VIN = 0 ↔ 5V
Inductive load (upper-lower arm)
VCE = VCES
Tj = 25°C
Tj = 125°C
Limits
Unit
Min.
Typ.
Max.
—
1.70 2.20
—
1.80 2.30
V
—
1.90 2.35
V
0.60
1.10
1.70
µs
—
0.30
—
µs
—
0.40
0.60
µs
—
1.40
2.00
µs
—
0.40
0.75
µs
—
—
1
mA
—
—
10
CONTROL (PROTECTION) PART
Symbol
Parameter
Condition
ID
VFOH
VFOL
VSC(ref)
IIN
UVDBt
UVDBr
UVDt
UVDr
tFO
Vth(on)
Vth(off)
Vth(hys)
Circuit current
Fault output voltage
Short circuit trip level
Input current
Control supply under-voltage
protection
Fault output pulse width
ON threshold voltage
OFF threshold voltage
ON/OFF threshold hysteresis
voltage
VD = VDB = 15V
VIN = 5V
Total of VP1-VNC, VN1-VNC
VUFB-U, VVFB-V, VWFB-W
VD = VDB = 15V
VIN = 0V
Total of VP1-VNC, VN1-VNC
VUFB-U, VVFB-V, VWFB-W
VSC = 0V, FO terminal pull-up to 5V by 10kΩ
VSC = 1V, IFO = 1mA
Tj = 25°C, VD = 15V
(Note 4)
VIN = 5V
Trip level
Tj ≤ 125°C
Reset level
Trip level
Reset level
(Note 5)
Applied between UP, VP, WP, UN, VN, WN-VNC
Limits
Unit
Min.
Typ.
Max.
—
—
2.80
—
—
0.55
mA
—
—
2.80
—
—
0.55
4.9
—
—
V
—
—
0.95
V
0.43
0.48
0.53
V
0.70
1.00
1.50
mA
10.0
—
12.0
V
10.5
—
12.5
V
10.3
—
12.5
V
10.8
—
13.0
V
20
—
—
µs
—
2.1
2.6
V
0.8
1.3
—
V
0.35
0.65
—
V
Note 4 : Short circuit protection is functioning only for the lower-arms. Please select the external shunt resistance such that the SC trip-level is
less than 1.7 times of the current rating.
5 : Fault signal is asserted corresponding to a short circuit or lower side control supply under-voltage failure.
Mar. 2007
3