CM1500HG-66R Datasheet, PDF (8/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1500HG-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
4000
VCC  2500V, VGE = ±15V
Tj = 150°C, RG(off) = 5.6Ω
3000
2000
1000
0
0
1000
2000
3000
4000
Collector-Emitter Voltage [V]
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA (RRSOA)
40 00
VCC  25 00 V, di /d t < 9 kA/µs
Tj = 150 °C
30 00
SHORT CIRCUIT
SAFE OPERATING AREA (SCSOA)
20
VCC  2500V, VGE = ±15V
RG(on) = 1.6Ω, RG(off) = 5.6Ω
Tj = 150°C
15
10
5
0
0
1000
2000
3000
4000
Collector-Emitter Voltage [V]
20 00
10 00
0
0
10 00
2 000
3 00 0
40 00
Emitter-Collector Voltage [V]
December 2012 _(HVM-1059-A)
8