CM1500HG-66R Datasheet, PDF (7/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1500HG-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
100
VCC = 1800V, VGE = ±15V
RG(on) = 1.6Ω, LS = 100nH
Tj = 125°C, Inductive load
10000
Irr
10
1000
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
100
VCC = 1800V, VGE = ±15V
RG(on) = 1.6Ω, LS = 100nH
Tj = 150°C, Inductive load
10000
Irr
10
1000
1
trr
100
1
trr
100
0.1
100
1000
Emitter Current [A]
10
10000
0.1
100
1000
Emitter Current [A]
10
10000
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.2
R th (j-c)Q = 8.5K/kW
R th (j-c)R = 1 5.5K/kW
1
0.8
0.6
0.4
0.2
0
0. 001
0.01
0.1
1
10
Time [s]
Z  R 1exp n
th( jc) ^{(t) }
i1

i


 ^{ }
 _

t


 ^{ i }

R_i [K/kW] :
t_i [sec] :
1
0.0055
0.0001
2
0.2360
0.0131
3
0.4680
0.0878
4
0.2905
0.6247
December 2012 _(HVM-1059-A)
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