CM1500HG-66R Datasheet, PDF (4/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

< HVIGBT MODULES >
CM1500HG-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
3 00 0
Tj = 1 50°C
2 50 0
V_GE = 1 9V
2 00 0
1 50 0
V_GE = 1 5V
V_GE = 13 V
V_{G E} = 11 V
1 00 0
50 0
V_GE = 9V
0
0
1
2
3
4
5
6
Collector - Emitter Voltage [V]
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
30 00
25 00
VGE = 15 V
20 00
15 00
Tj = 25 °C
Tj = 1 25°C
Tj = 1 50° C
10 00
5 00
0
0
1
2
3
4
5
Collector-Emitter Saturation Voltage [V]
TRANSFER CHARACTERISTICS
(TYPICAL)
3 00 0
2 50 0
V_CE = V_GE
2 00 0
1 50 0
1 00 0
50 0
Tj = 1 50 °C
Tj = 2 5° C
0
0
2
4
6
8 10 12
Gate - Emi tter Voltage [V]
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
3000
2500
2000
Tj = 125°C
Tj = 25°C
Tj = 150°C
1500
1000
500
0
0
1
2
3
4
5
Emitter-Collector Voltage [V]
December 2012 _(HVM-1059-A)
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