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| CM100RX-24S1 Datasheet, PDF (8/13 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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< IGBT MODULES >
CM100RX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=6.2 Ω, INDUCTIVE LOAD
---------------: Tj =150 °C, - - - - -: Tj =125 °C
1000
td(off)
tf
100
td(on)
tr
10
1
10
100
1000
COLLECTOR CURRENT IC (A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=6.2 Ω,
INDUCTIVE LOAD, PER PULSE
---------------: Tj =150 °C, - - - - -: Tj =125 °C
10
100
Eoff
Eon
1
10
Err
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, IC=100 A, INDUCTIVE LOAD
---------------: Tj =150 °C, - - - - -: Tj =125 °C
1000
td(off)
tf
100
td(on)
tr
10
1
10
100
EXTERNAL GATE RESISTANCE RG (Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, IC/IE=100 A,
INDUCTIVE LOAD, PER PULSE
---------------: Tj =150 °C, - - - - -: Tj =125 °C
100
Eon
10
Eoff
Err
0.1
10
1
100
1000
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
Publication Date : December 2013
8
1
1
10
100
EXTERNAL GATE RESISTANCE RG (Ω)
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