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CM100RX-24S1 Datasheet, PDF (7/13 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE
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CM100RX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
OUTPUT CHARACTERISTICS
(TYPICAL)
T j =25 °C
200
VGE=20 V
15 V
12 V
150
11 V
100
10 V
50
9V
(Chip)
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS
(TYPICAL)
T j =25 °C
10
(Chip)
8
IC=200 A
IC=100 A
6
IC=40 A
4
2
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS
(TYPICAL)
VGE=15 V
3.5
(Chip)
3
T j =150 °C
2.5
T j =125 °C
2
1.5
T j =25 °C
1
0.5
0
0
50
100
150
200
COLLECTOR CURRENT IC (A)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
G-E short-circuited
1000
(Chip)
T j =125 °C
100
T j =150 °C
T j =25 °C
0
6
8
10
12
14
16
18
20
GATE-EMITTER VOLTAGE VGE (V)
10
0.5
1
1.5
2
2.5
3
3.5
4
EMITTER-COLLECTOR VOLTAGE VEC (V)
Publication Date : December 2013
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