CM100RX-24S1 Datasheet, PDF (6/13 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM100RX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT
21
21
21
VGE=15V
VGE=15V
VGE=15V
20
IC
16
IC
12
IC
V
19
1
Short-
circuited
18
17
22
V
15
2
Short-
circuited
14
13
22
V
11
3
Short-
circuited
10
9
22
Short-
circuited
20
19
VGE=15V
18
17
21
V
1
Short-
circuited
16
15
VGE=15V
IC
14
22
13
21
V
2
Short-
circuited
12
11
VGE=15V
IC
10
22
9
21
V
3
VGE=15V
IC
6
22
5
21
V
4
IC
22
Gate-emitter GVP-EVP GVN-EVN,
short-circuited GWP-EWP, GWN-EWN,
GB-EB
UP / UN IGBT
Gate-emitter GUP-EUP, GUN-EUN,
short-circuited GWP-EWP, GWN-EWN,
GB-EB
VP / VN IGBT
Gate-emitter GUP-EUP, GUN-EUN,
short-circuited GVP-EVP, GVN-EVN,
GB-EB
WP / WN IGBT
VCEsat characteristics test circuit
Brake IGBT
21
21
21
Short-
Short-
Short-
circuited
IE
circuited
IE
circuited
IE
20
16
12
V
19
1
Short-
circuited
18
17
22
V
15
2
Short-
circuited
14
13
22
V
11
3
Short-
circuited
10
9
22
Short-
circuited
20
19
Short-
circuited
18
17
21
V
1
IE
22
Gate-emitter GVP-EVP GVN-EVN,
short-circuited GWP-EWP, GWN-EWN,
GB-EB
UP / UN DIODE
Short-
circuited
16
15
Short-
circuited
14
13
21
Short-
circuited
12
V
11
2
Short-
IE
circuited
10
22
9
21
V
3
IE
22
Gate-emitter GUP-EUP, GUN-EUN,
short-circuited GWP-EWP, GWN-EWN,
GB-EB
VP / VN DIODE
Gate-emitter GUP-EUP, GUN-EUN,
short-circuited GVP-EVP, GVN-EVN,
GB-EB
WP / WN DIODE
VEC / VF characteristics test circuit
Publication Date : December 2013
6
21
IE
4
V
6
5
22
Brake DIODE