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| CM1000DUC-34NF Datasheet, PDF (8/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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CAPACITANCE CHARACTERISTICS
(TYPICAL)
G-E short-circuited, Tj =25 °C
1000
Cies
100
MITSUBISHI IGBT MODULES
CM1000DUC-34NF
HIGH POWER SWITCHING USE
INSULATED TYPE
FREE WHEELING DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
VCC=1000 V, VGE=±15 V, RG=0.47 â¦, Tj =25 °C,
INDUCTIVE LOAD
10000
10
Coes
1
Cres
0.1
0.1
1
10
100
COLLECTOR-EMITTER VOLTAGE VCE (V)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
IC=1000 A, Tj =25 °C
20
VCC=800 V
15
VCC=1000 V
10
5
0
0
2000
4000
6000
8000
10000
GATE CHARGE QG (nC)
8
1000
Irr
trr
100
100
1000
EMITTER CURRENT IE (A)
10000
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
(MAXIMUM)
Single pulse, TC=25°C
1
0.1
0.01
0.001
0.00001 0.0001 0.001
0.01
0.1
1
10
Rth(j-c)Q=14 K/kW, Rth(j-c)D=23 K/kW
TIME (S)
April-2012
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