CM1000DUC-34NF Datasheet, PDF (6/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
T_j =25 °C
2000
V_GE=20 V
13.5 V
1500
15 V
12 V
(Chip)
1000
11 V
500
10 V
9V
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE V_CE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
T_j =25 °C
(Chip)
10
8
I_C=2000 A
I_C=1000 A
6
I_C=400 A
4
2
0
6
8
10
12
14
16
18
20
GATE-EMITTER VOLTAGE V_GE (V)
MITSUBISHI IGBT MODULES
CM1000DUC-34NF
HIGH POWER SWITCHING USE
INSULATED TYPE
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
V_GE=15 V
(Chip)
4
T_j =125 °C
3
T_j =25 °C
2
1
0
0
500
1000
1500
2000
COLLECTOR CURRENT I_C (A)
10000
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
G-E short-circuited
(Chip)
T_j =125 °C
1000
T_j =25 °C
100
0.5
1
1.5
2
2.5
3
3.5
EMITTER-COLLECTOR VOLTAGE V_EC (V)
6
April-2012