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| CM1000DUC-34NF Datasheet, PDF (7/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=1000 V, VGE=±15 V, RG=0.47 â¦, Tj =125 °C,
INDUCTIVE LOAD
10000
1000
td(off)
td(on)
tf
tr
100
MITSUBISHI IGBT MODULES
CM1000DUC-34NF
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=1000 V, IC=1000 A, VGE=±15 V, Tj =125 °C,
INDUCTIVE LOAD
10000
1000
td(off)
tr
100
td(on)
tf
10
100
1000
COLLECTOR CURRENT IC (A)
10000
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=1000 V, VGE=±15 V, RG=0.47 â¦, Tj =125 °C,
INDUCTIVE LOAD, PER PULSE
1000
Eon
Eoff
Err
100
10
0.1
1
10
EXTERNAL GATE RESISTANCE RG (â¦)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=1000 V, IC/IE=1000 A, VGE=±15 V, Tj =125 °C,
INDUCTIVE LOAD, PER PULSE
10000
1000
100
Eon
Eoff
Err
10
100
1000
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
10000
7
10
0.1
1
10
EXTERNAL GATE RESISTANCE RG (â¦)
April-2012
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