PS21961-4 Datasheet, PDF (7/10 Pages) Mitsubishi Electric Semiconductor – Dual-In-Line Package Intelligent Power Module

MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21961-4/-4A/-4C/-4W
TRANSFER-MOLD TYPE
INSULATED TYPE
RECOMMENDED OPERATION CONDITIONS
Symbol
Parameter
Condition
Limits
Min.
Typ.
Max.
VCC
Supply voltage
Applied between P-N
0
300
400
VD
Control supply voltage
Applied between VP1-VNC, VN1-VNC
13.5 15.0 16.5
VDB
Control supply voltage
∆VD, ∆VDB Control supply variation
tdead
Arm shoot-through blocking time
fPWM
PWM input frequency
Applied between VUFB-U, VVFB-V, VWFB-W
For each input signal, TC ≤ 100°C
TC ≤ 100°C, Tj ≤ 125°C
13.0 15.0 18.5
–1
—
1
1.5
—
—
—
—
20
VCC = 300V, VD = VDB = 15V,
fPWM = 5kHz
—
—
2.0
IO
Allowable r.m.s. current
P.F = 0.8, sinusoidal PWM,
Tj ≤ 125°C, TC ≤ 100°C
(Note 8) ^{fPWM = 15kHz —}
—
1.5
PWIN(on) Allowable minimum input
PWIN(off) ^{pulse width}
0.5
—
—
(Note 9) 0.5
—
—
VNC
VNC variation
Between VNC-N (including surge)
–5.0
—
5.0
Note 8 : The allowable r.m.s. current also depends on the actual application conditions.
9 : IPM might not make response or work properly if the input signal pulse width is less than the recommended minimum value.
Unit
V
V
V
V/µs
µs
kHz
Arms
µs
V
Fig. 7 THE DIP-IPM INTERNAL CIRCUIT
VUFB
VP1
UP
VNC
HVIC
VCC
VUB
UP
UOUT
COM
VUS
RC-IGBT1
DIP-IPM
P
U
RC-IGBT2
VVFB
VP
VVB
VP
VOUT
VVS
V
RC-IGBT3
VWFB
VWB
WP
WP
WOUT
VWS
W
RC-IGBT4
LVIC
UOUT
VN1
VCC
RC-IGBT5
VOUT
UN
UN
VN
VN
RC-IGBT6
WN
WN
WOUT
Fo
Fo
CIN
VNO
VNC
GND
N
CIN
Sep. 2007
7