PS21961-4 Datasheet, PDF (5/10 Pages) Mitsubishi Electric Semiconductor – Dual-In-Line Package Intelligent Power Module

MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21961-4/-4A/-4C/-4W
TRANSFER-MOLD TYPE
INSULATED TYPE
TOTAL SYSTEM
Symbol
Parameter
VCC(PROT)
Supply voltage self protection limit
(short circuit protection capability)
TC
Module case operation temperature
Tstg
Storage temperature
Viso
Isolation voltage
Condition
VD = 13.5~16.5V, Inverter part
Tj = 125°C, non-repetitive, less than 2µs
(Note 2)
60Hz, Sinusoidal, 1 minute,
All connected pins to heat-sink plate
Ratings
400
–20~+100
–40~+125
1500
Unit
V
°C
°C
Vrms
Note 2: TC measurement point
Control terminals
DIP-IPM
11.6mm
3mm
RC-IGBT chip position
Power terminals
TC point
Heat sink side
THERMAL RESISTANCE
Symbol
Parameter
Condition
Limits
Unit
Min.
Typ.
Max.
Rth(j-c)Q ^{Junction to case thermal}
Inverter RC-IGBT part (per 1/6 module)
resistance
(Note 3)
—
—
4.7 °C/W
Note 3 : Grease with good thermal conductivity and long-term quality should be applied evenly with +100µm~+200µm on the contacting sur-
face of DIP-IPM and heat-sink.
The contacting thermal resistance between DIP-IPM case and heat sink (Rth(c-f)) is determined by the thickness and the thermal
conductivity of the applied grease. For reference, Rth(c-f) (per 1/6 module) is about 0.3°C/W when the grease thickness is 20µm and
the thermal conductivity is 1.0W/m·k.
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
Parameter
VCE(sat)
VEC
ton
trr
tc(on)
toff
tc(off)
ICES
Collector-emitter saturation
voltage
FWD forward voltage
Switching times
Collector-emitter cut-off
current
Condition
VD = VDB = 15V
IC = 3A, Tj = 25°C
VIN = 5V
IC = 3A, Tj = 125°C
Tj = 25°C, –IC = 3A, VIN = 0V
VCC = 300V, VD = VDB = 15V
IC = 3A, Tj = 125°C, VIN = 0 ↔ 5V
Inductive load (upper-lower arm)
VCE = VCES
Tj = 25°C
Tj = 125°C
Limits
Unit
Min.
Typ.
Max.
—
1.70 2.20
—
1.80 2.30
V
—
1.50 2.00
V
0.50
0.95
1.50
µs
—
0.30
—
µs
—
0.35
0.60
µs
—
1.40
2.00
µs
—
0.50
0.80
µs
—
—
1
mA
—
—
10
Sep. 2007
5