CM600DX-24S1 Datasheet, PDF (7/10 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM600DX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V_CC=600 V, V_GE=±15 V, R_G=0 Ω, INDUCTIVE LOAD
---------------: T_j =150 °C, - - - - -: T_j =125 °C
1000
t_d(off)
t_d(on)
t_f
100
t_r
10
10
100
1000
COLLECTOR CURRENT I_C (A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V_CC=600 V, V_GE=±15 V, R_G=0 Ω,
INDUCTIVE LOAD, PER PULSE
---------------: T_j =150 °C, - - - - -: T_j =125 °C
1000
100
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V_CC=600 V, V_GE=±15 V, I_C=600 A, INDUCTIVE LOAD
---------------: T_j =150 °C, - - - - -: T_j =125 °C
1000
t_d(on)
t_d(off)
t_r
t_f
100
0.1
1
10
100
EXTERNAL GATE RESISTANCE R_G (Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V_CC=600 V, V_GE=±15 V, I_C/I_E=600 A,
INDUCTIVE LOAD, PER PULSE
---------------: T_j =150 °C, - - - - -: T_j =125 °C
1000
100
10
E_rr
E_off
10
1
E_on
1
0.1
10
100
1000
COLLECTOR CURRENT I_C (A)
EMITTER CURRENT I_E (A)
Publication Date : December 2013
7
E_on
100
E_off
E_rr
10
0.1
1
10
EXTERNAL GATE RESISTANCE R_G (Ω)