CM600DX-24S1 Datasheet, PDF (6/10 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM600DX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
OUTPUT CHARACTERISTICS
(TYPICAL)
T _j =25 °C
1200
V_GE=20 V
15 V
1000
800
12 V
(Chip)
600
11 V
400
10 V
200
9V
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE V_CE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS
(TYPICAL)
V_GE=15 V
3.5
3
2.5
T _j =150 °C
T _j =125 °C
(Chip)
2
T _j =25 °C
1.5
1
0.5
0
0
200
400
600
800
1000
1200
COLLECTOR CURRENT I_C (A)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10000
G-E short-circuited
(Chip)
Publication Date : December 2013
T _j =125 °C
1000
T _j =150 °C
T _j =25 °C
100
0
0.5
1
1.5
2
2.5
3
3.5
4
EMITTER-COLLECTOR VOLTAGE V_EC (V)
6