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| CM600DX-24S1 Datasheet, PDF (4/10 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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< IGBT MODULES >
CM600DX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
RECOMMENDED OPERATING CONDITIONS
Symbol
Item
VCC
VGEon
RG
(DC) Supply voltage
Gate (-emitter drive) voltage
External gate resistance
CHIP LOCATION (Top view)
Conditions
Applied across C1-E2 terminals
Applied across G1-Es1/G2-Es2 terminals
Per switch
Limits
Unit
Min.
Typ.
Max.
-
600
850
V
13.5
15.0
16.5
V
0
-
6.8
Ω
Dimension in mm, tolerance: ±1 mm
Tr1/Tr2: IGBT, Di1/Di2: DIODE, Th: NTC thermistor
Publication Date : December 2013
4
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