CM50MX-24A_12 Datasheet, PDF (7/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

MITSUBISHI IGBT MODULES
CM50MX-24A
HIGH POWER SWITCHING USE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
10³
7
5
3
tf
2
td(off)
10²
7
5
3
2
10¹
7
5
3
2
101⁰ ₀₀
td(on)
tr
2 3 5 7 10¹
Conditions:
VCC = 600V
VGE = ±15V
IC = 50A
Tj = 125°C
Inductive load
2 3 5 7 10²
GATE RESISTANCE RG (Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
10²
Conditions:
7 _{VCC = 600V}
5 _{VGE = ±15V}
3 ^{IC, IE = 50A}
Tj = 125°C
2 _{Inductive load}
Eon
10¹
7
Eoff
5
3
2
Err
101⁰ _{00 2 3 5 7 101 2 3 5 7 102}
GATE RESISTANCE RG (Ω)
GATE CHARGE CHARACTERISTICS
(TYPICAL) Inverter part
20
IC = 50A
VCC = 400V
15
VCC = 600V
10
5
0
0 50 100 150 200 250 300 350
GATE CHARGE QG (nC)
7
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
10¹
7
5
3
2
10⁰
7
5
3
2
10^–₁¹ ₀₀
Eoff
Err
Eon
2 3 5 7 10¹
Conditions:
VCC = 600V
VGE = ±15V
RG = 6.2Ω
Tj = 125°C
Inductive load
2 3 5 7 10²
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE WHEELING DIODE
(TYPICAL) Inverter part
10³
7
5
3
2
trr
10²
7
5
3
Irr
2
10¹
7
5
3
2
101⁰ ₀₀
23
5 7 10¹
Conditions:
VCC = 600V
VGE = ±15V
RG = 6.2Ω
Tj = 25°C
Inductive load
2 3 5 7 10²
EMITTER CURRENT IE (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
10⁰
7 Single pulse,
5 _{TC = 25°C}
3
2
10^–1
7
5
3
2
10^–2
7 ^{Inverter IGBT part : Per unit base = Rth(j–c) = 0.35K/W}
5 Inverter FWDi part : Per unit base = Rth(j–c) = 0.63K/W
3 ^{Converter-Di part : Per unit base = Rth(j–c) = 0.33K/W}
2 Brake IGBT part : Per unit base = Rth(j–c) = 0.48K/W
10^{–3 Brake Clamp-Di part : Per unit base = Rth(j–c) = 0.79K/W}
10^–52 3 5710^–42 3 5710^–32 3 5710^–22 3 5710^–12 3 5710⁰ 2 3 5710¹
TIME (s)
Oct. 2011