CM50MX-24A_12 Datasheet, PDF (2/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
INVERTER PART
Symbol
Parameter
VCES
Collector-emitter voltage
G-E Short
VGES
IC
ICRM
Gate-emitter voltage
Collector current
C-E Short
DC, TC = 97°C
Pulse
PWRW
Maximum collector dissipation TC = 25°C
IE (Note.3) Emitter current
TC = 25°C
IERM(Note.3) (Free wheeling diode forward current) Pulse
Conditions
MITSUBISHI IGBT MODULES
CM50MX-24A
HIGH POWER SWITCHING USE
Rating
Unit
1200
V
±20
(Note. 1)
50
A
(Note. 4)
100
(Note. 1, 5)
355
W
(Note. 1)
50
A
(Note. 4)
100
BRAKE PART
Symbol
Parameter
Conditions
Rating
Unit
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
IC
ICRM
Collector current
PWRW
Maximum collector dissipation
VRRM(Note.3) Repetitive peak reverse voltage
IF (Note.3) _{Forward current}
IFRM(Note.3)
G-E Short
C-E Short
DC, TC = 106°C
Pulse
TC = 25°C
TC = 25°C
Pulse
1200
V
±20
(Note. 1)
30
A
(Note. 4)
60
(Note. 1, 5)
260
W
1200
V
(Note. 1)
30
A
(Note. 4)
60
CONVERTER PART
Symbol
VRRM
Ea
IO
IFSM
I²t
Parameter
Conditions
Repetitive peak reverse voltage
Recommended AC input voltage
DC output current
3-phase full wave rectifying, TC = 1°C
(Note. 1)
Surge forward current
The sine half wave 1 cycle peak value, f = 60Hz,
non-repetitive
Current square time
Value for one cycle of surge current
Rating
1600
440
50
500
1040
Unit
V
9
A
A^2S
MODULE
Symbol
Parameter
Conditions
Tj
Tstg
VisoO
—
—
—
Junction temperature
Storage temperature
Isolation voltage
Base plate flatness
0RXQWLQJWorque
Weight
Terminals to base plate, f = 60Hz, AC for 1 min506
On the centerline X, Y
(Note. 8)
Mounting
M5 screw
(Typical)
Note. 8: The base plate flatness measurement points are in the following figure.
:
9
–

)FBU
TJOL
TJEF
É¿
DPOWFY

–ɿ
DPODBWF
Rating
–40 ~ +150
–40 ~ +125
2500
±0 ~ +100
2.5 ~ 3.5
270
Unit
°C
9
μm
N·m
g
2FW. 20
2