CM50MX-24A_12 Datasheet, PDF (3/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

MITSUBISHI IGBT MODULES
CM50MX-24A
HIGH POWER SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
INVERTER PART
Symbol
Parameter
Conditions
Min.
ICES
Collector cutoff current
VCE = VCES, G-E Short
—
VGE(th) Gate-emitter threshold voltage IC = 5mA, VCE = 10V
6
IGES
Gate-emitter leakage current VGE = VGES, C-E Short
—
VCEsat
Collector-emitter saturation
voltage
IC = 50A, VGE = 15V
IC = 50A, VGE = 15V
Tj = 25°C
—
(Note. 6)
Tj = 125°C
—
Chip
—
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 10V
G-E Short
—
(Note. 6) —
—
QG
Gate charge
VCC = 600V, IC = 50A, VGE = 15V
—
td(on)
Turn-on delay time
VCC = 600V, IC = 50A
—
tr
5ise time
VGE = ±15V, RG = 6.2Ω
—
td(off)
Turn-off delay time
Inductive load
—
tf
)all time
—
trr (Note.3) Reverse recovery time
(IE = 50A)
—
Qrr (Note.3) Reverse recovery charge
—
VEC(Note.3) Emitter-collector voltage
IE = 50A, G-E Short
Tj = 25°C
(Note. 6)
—
Tj = 125°C
—
IE = 50A, G-E Short
Chip
—
Rth(j-c)Q Thermal resistance
per 1/6 IGBT
—
(Note. 1)
Rth(j-c)D (Junction to case)
per 1/6 free wheeling diode
—
UJ
Internal gate resistance
TC = 25°C, per switch
—
RG
External gate resistance
6
Limits
Typ.
Max. ^Unit
—
1
mA
7
8
V
—
0.5
μA
2.0
2.6
2.2
—
V
1.9
—
—
8.5
—
0.75 nF
—
0.17
250
—
nC
—
100
—
50
—
300
ns
—
600
—
200
2
—
μC
2.6
3.4
2.16
—
V
2.5
—
—
0.35 _K/W
—
0.63
0
—
Ω
—
62
BRAKE PART
Symbol
Parameter
Conditions
Min.
ICES
Collector cutoff current
VCE = VCES, G-E Short
—
VGE(th) Gate-emitter threshold voltage IC = 3mA, VCE = 10V
6
IGES
GateHPLWWHU leakage current VGE = VGES, C-E Short
—
VCEsat
Collector-emitter saturation
voltage
IC = 30A, VGE = 15V
IC = 30A, VGE = 15V
Tj = 25°C
—
(Note. 6)
Tj = 125°C
—
Chip
—
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 10V
G-E Short
—
(Note. 6) —
—
QG
Gate charge
VCC = 600V, IC = 30A, VGE = 15V
—
IRRM(Note.3) Repetitive peak reverse current VR = VRRM
—
VF(Note.3) Forward voltage
IF = 30A
Tj = 25°C
—
(Note. 6)
Tj = 125°C
—
IF = 30A
Chip
—
Rth(j-c)Q Thermal resistance
per IGBT
—
Rth(j-c)D
(Note. 1)
(Junction to case)
per Clamp diode
—
UJ
Internal gate resistance
TC = 25°C
—
RG
External gate resistance
10
Limits
Typ.
Max. ^Unit
—
1
mA
7
8
V
—
0.5
μA
2.0
2.6
2.2
—
V
1.9
—
—
5.1
—
0.45 nF
—
0.1
150
—
nC
—
1
mA
2.6
3.4
2.16
—
V
2.5
—
—
0.48
K/W
—
0.79
0
—
Ω
—
100
CONVERTER PART
Symbol
IRRM
VF
Rth(j-c)
Parameter
Conditions
Repetitive peak reverse current
Forward voltage
Thermal resistance
(Junction to case) ^{(Note. 1)}
VR = VRRM, Tj = 150°C
IF = 50A
per Diode
3
Limits
Min.
Typ.
Max. ^Unit
—
—
6
mA
—
1.2
1.6
V
—
—
0.33 K/W
Jan. 2009