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| CM500HA-34A_12 Datasheet, PDF (7/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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CAPACITANCE CHARACTERISTICS
(TYPICAL)
G-E short-circuited, Tj =25 °C
1000
100
Cies
10
Coes
1
Cres
0.1
0.1
1
10
COLLECTOR-EMITTER VOLTAGE
100
VCE (V)
FREE WHEELING DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
VCC=1000 V, VGE=±15 V, RG=3.0 â¦, T j =125 °C
INDUCTIVE LOAD
1000
MITSUBISHI IGBT MODULES
CM500HA-34A
HIGH POWER SWITCHING USE
INSULATED TYPE
GATE CHARGE CHARACTERISTICS
(TYPICAL)
IC=500 A, T j =25 °C
20
VCC=800 V
15
VCC=1000 V
10
5
0
0
1000
2000
3000
4000
5000
GATE CHARGE QG (nC)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
(MAXIMUM)
Single pulse, TC=25°C
1
trr
100
Irr
0.1
0.01
10
10
100
1000
EMITTER CURRENT IE (A)
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Rth(j-c)Q=25 K/kW, Rth(j-c)D=42 K/kW
TIME (S)
7
July-2010
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