CM500HA-34A_12 Datasheet, PDF (2/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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MITSUBISHI IGBT MODULES
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CM500HA-34A
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HIGH POWER SWITCHING USE
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çç_{ABSOLUTE MAXIMUM RATINGS (Tj}ç_{=25 °C, unless otherwise specified)}
INSULATED TYPE
Symbol
Item
Conditions
Rating
Unit
V_CES
Collector-emitter voltage
G-E short-circuited
1700
V
V_GES
I_C
I_CRM
P_tot
IE
IERM
(Note.1)
(Note.1)
Gate-emitter voltage
Collector current
Total power dissipation
Emitter current
(Free wheeling diode forward current)
C-E short-circuited
DC, TC=87 °C ^(Note.2)
Pulse, Repetitive ^(Note.3)
TC=25 °C ^{(Note.2, 4)}
TC=25 °C ^{(Note.2, 4)}
Pulse, Repetitive ^(Note.3)
±20
V
500
A
1000
5000
W
500
A
1000
T_j
Junction temperature
-
T_stg
Storage temperature
-
-40 ~ +150
°C
-40 ~ +125
V_isol
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
3500
V
MECHANICAL CHARACTERISTICS
Symbol
Item
M_t
M_t
Mounting torque
M_s
m
Weight
e_c
Flatness of base plate
Conditions
Main terminals
Auxiliary terminals
Mounting to heat sink
-
On the centerline X, Y
M 6 screw
M 4 screw
M 6 screw
(Note.5)
Limits
Unit
Min.
Typ.
Max.
1.96
2.45
2.94
0.98
1.18
1.47
N·m
1.96
2.45
2.94
-
480
-
g
±0
-
+100
μm
ELECTRICAL CHARACTERISTICS (T _j =25 °C, unless otherwise specified)
Symbol
Item
Conditions
Limits
Unit
Min.
Typ.
Max.
I_CES
Collector-emitter cut-off current
VCE=VCES, G-E short-circuited
-
-
1
mA
I_GES
Gate-emitter leakage current
±VGE=VGES, C-E short-circuited
-
-
3
μA
V_GE(th)
Gate-emitter threshold voltage
IC=50 mA, VCE=10 V
5.5
7
8.5
V
V_CEsat
Collector-emitter saturation voltage
IC=500 A , ^(Note.6)
VGE=15 V
T _j =25 °C
-
T _j =125 °C
-
2.2
3.0
2.45
-
V
C_ies
Input capacitance
-
-
120
C_oes
Output capacitance
VCE=10 V, G-E short-circuited
-
-
14
nF
C_res
Reverse transfer capacitance
-
-
2.6
Q_G
Gate charge
VCC=1000 V, IC=500 A, VGE=15 V
-
3300
-
nC
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VCC=1000 V, IC=500 A, VGE=±15 V,
-
-
RG=3.0 Ω, Inductive load
-
-
-
900
-
500
ns
-
700
-
350
V (Note.1)
EC
Emitter-collector voltage
IE=500 A , ^(Note.6) G-E short-circuited
-
2.3
3.2
V
t _{r r} ^(Note.1) Reverse recovery time
VCC=1000 V, IE=500 A, VGE=±15 V,
-
-
650
ns
Q (Note.1)
rr
Reverse recovery charge
R_G=3.0 Ω, Inductive load
-
50
-
μC
E_on
Turn-on switching energy per pulse V_CC=1000 V, I_C=I_E=500 A,
-
267.8
-
E_off
Turn-off switching energy per pulse V_GE=±15 V, R_G=3.0 Ω,
-
138.5
-
mJ
E_rr ^(Note.1) Reverse recovery energy per pulse T _j =125 °C, Inductive load
-
98.1
-
r_g
Internal gate resistance
TC=25 °C
-
1.0
-
Ω
R_G
External gate resistance
-
3.0
-
10
Ω
THERMAL RESISTANCE CHARACTERISTICS
Symbol
Item
Conditions
R_th(j-c)Q
R_th(j-c)D
R_th(c-s)
Thermal resistance ^(Note.2)
Contact thermal resistance ^(Note.2)
Junction to case, IGBT part
Junction to case, FWDi part
Case to heat sink,
Thermal grease applied ^(Note.7)
Limits
Unit
Min.
Typ.
Max.
-
-
25
K/kW
-
-
42
K/kW
-
20
-
K/kW
2
July-2010