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| CM500HA-34A_12 Datasheet, PDF (6/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=1000 V, VGE=±15 V, RG=3.0 â¦, T j =125 °C
INDUCTIVE LOAD
10000
MITSUBISHI IGBT MODULES
CM500HA-34A
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=1000 V, IC=500 A, VGE=±15 V, T j =125 °C
INDUCTIVE LOAD
10000
1000
td(off)
tf
td(on)
100
tr
10
10
100
1000
COLLECTOR CURRENT IC (A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=1000 V, VGE=±15 V, RG=3.0 â¦, T j =125 °C
INDUCTIVE LOAD, PER PULSE
1000
1000
td(off)
td(on)
tf
tr
100
1
10
EXTERNAL GATE RESISTANCE RG (â¦)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=1000 V, IC/IE=500 A, VGE=±15 V, T j =125 °C
INDUCTIVE LOAD, PER PULSE
1000
Eon
Eon
Eoff
100
Err
100
Err
Eoff
10
10
100
1000
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
6
10
1
10
EXTERNAL GATE RESISTANCE RG (â¦)
July-2010
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