CM1800HCB-34N Datasheet, PDF (7/7 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1800HCB-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
5000
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
VCC ≤ 1200V, VGE = ±15V
Tj = 125°C, RG (off) ≥ 1.3Ω
4000
3000
2000
1000
0
0
500
1000
1500
2000
COLLECTOR-EMITTER VOLTAGE (V)
30000
25000
SHORT CIRCUIT
SAFE OPERATING AREA
(SCSOA)
VCC ≤ 1000V, VGE = ±15V
RG (on) ≥ 0.9Ω, RG (off) ≥ 1.3Ω
Tj = 125°C, tpsc ≤ 10µs
20000
15000
10000
5000
0
0
500
1000
1500
2000
COLLECTOR-EMITTER VOLTAGE (V)
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA
(RRSOA)
2500
VCC ≤ 1200V, di/dt ≤ 8000A/µs
Tj = 125°C
2000
1500
1000
500
0
0
500
1000
1500
2000
COLLECTOR-EMITTER VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
7
Sep. 2009