CM1800HCB-34N Datasheet, PDF (2/7 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1800HCB-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS
Symbol
Item
Conditions
Ratings
Unit
VCES
Collector-emitter voltage
VGE = 0V, Tj = 25°C
1700
V
VGES
Gate-emitter voltage
VCE = 0V, Tj = 25°C
± 20
V
IC
Collector current
ICM
DC, Tc = 90°C
Pulse
1800
A
(Note 1)
3600
A
IE
Emitter current
(Note 2) ^DC
IEM
Pulse
1800
A
(Note 1)
3600
A
Pc
Maximum power dissipation (Note 3) Tc = 25°C, IGBT part
13800
W
Viso
Isolation voltage
RMS, sinusoidal, f = 60Hz, t = 1 min.
4000
V
Tj
Junction temperature
–40 ~ +150
°C
Top
Operating temperature
–40 ~ +125
°C
Tstg
Storage temperature
–40 ~ +125
°C
tpsc
Maximum short circuit pulse width VCC = 1000V, VCE ≤ VCES, VGE = 15V, Tj = 125°C
10
µs
ELECTRICAL CHARACTERISTICS
Symbol
ICES
VGE(th)
IGES
Cies
Coes
Cres
Qg
VCE(sat)
td(on)
tr
Eon(10%)
td(off)
tf
Eoff(10%)
VEC
trr
Qrr
Erec(10%)
Item
Conditions
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Collector-emitter saturation
voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
(Note 5)
Turn-off delay time
Turn-off fall time
Turn-off switching energy
(Note 5)
Emitter-collector voltage
(Note 2)
Reverse recovery time
(Note 2)
Reverse recovery charge
(Note 2)
Reverse recovery energy
(Note 2), (Note 5)
VCE = VCES, VGE = 0V
VCE = 10 V, IC = 180 mA, Tj = 25°C
VGE = VGES, VCE = 0V, Tj = 25°C
Tj = 25°C
Tj = 125°C
VCE = 10 V, VGE = 0 V, f = 100 kHz, Tj = 25°C
VCC = 900 V, IC = 1800 A, VGE = ±15 V, Tj = 25°C
IC = 1800 A
(Note 4) Tj = 25°C
VGE = 15 V
Tj = 125°C
VCC = 900 V, IC = 1800 A, VGE = ±15 V
RG(on) = 0.9 Ω, Tj = 125°C, Ls = 80 nH
Inductive load
VCC = 900 V, IC = 1800 A, VGE = ±15 V
RG(off) = 1.3 Ω, Tj = 125°C, Ls = 80 nH
Inductive load
IE = 1800 A
VGE = 0 V
(Note 4) Tj = 25°C
Tj = 125°C
VCC = 900 V, IE = 1800 A, VGE = ±15 V
RG(on) = 0.9 Ω, Tj = 125°C, Ls = 80 nH
Inductive load
Limits
Unit
Min
Typ
Max
—
—
8
mA
—
6.0
16
5.5
6.5
7.5
V
—
—
0.5
µA
—
352
—
nF
—
19.2
—
nF
—
5.6
—
nF
—
24.4
—
µC
—
2.00 2.60
V
—
2.20
—
—
—
1.50
µs
—
—
0.60
µs
—
0.56
—
J/P
—
—
3.00
µs
—
—
0.60
µs
—
0.50
—
J/P
—
2.10 2.90
V
—
1.75
—
—
—
1.50
µs
—
700
—
µC
—
0.44
—
J/P
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
2
Sep. 2009