CM1800HCB-34N Datasheet, PDF (5/7 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1800HCB-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10⁴
7
5
3
2
10³
7
5
Cies
3
2
10²
7
5
3
2
10¹
7
5
3 _{VGE = 0V, Tj = 25°C}
2 _{f = 100kHz}
101⁰_{0-1 2 3 5 7100 2 3}
5 710¹
Coes
Cres
2 3 5 710²
COLLECTOR-EMITTER VOLTAGE (V)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS
(TYPICAL)
2.5
VCC = 900V, VGE = ±15V
RG (on) = 0.9Ω, RG (off) = 1.3Ω
Tj = 125°C, Inductive load
2.0
Eon
1.5
Eoff
1.0
0.5
Erec
0
0
1000
2000
3000
4000
COLLECTOR CURRENT (A)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCE = 900V, IC = 1800A
Tj = 25°C
15
10
5
0
-5
-10
-15
0
10
20
30
40
GATE CHARGE (µC)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS
(TYPICAL)
3.0
VCC = 900V, IC = 1800A
VGE = ±15V, Tj = 125°C
2.5 ^{Inductive load}
Eon
2.0
1.5
1.0
0.5
0
0
Eoff
Erec
1
2
3
4
5
6
GATE RESISTANCE (Ω)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
5
Sep. 2009