CM1200HG-66H_09 Datasheet, PDF (7/7 Pages) Mitsubishi Electric Semiconductor – HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
3000
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
VCC ≤ 2200V, VGE = ±15V
Tj = 125°C, RG ≥ 1.6Ω
2500
2000
1500
1000
500
20000
SHORT CIRCUIT
SAFE OPERATING AREA
(SCSOA)
VCC ≤ 2200V, VGE = ±15V
Tj = 125°C, RG ≥ 1.6Ω
15000
10000
5000
0
0
1000
2000
3000
4000
COLLECTOR-EMITTER VOLTAGE (V)
0
0
1000
2000
3000
4000
COLLECTOR-EMITTER VOLTAGE (V)
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA
(RRSOA)
3000
VCC ≤ 2200V, di/dt ≤ 5400A/µs
Tj = 125°C
2500
2000
1500
1000
500
0
0
1000
2000
3000
4000
COLLECTOR-EMITTER VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
7
May 2009