CM1200HG-66H_09 Datasheet, PDF (4/7 Pages) Mitsubishi Electric Semiconductor – HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
2400
OUTPUT CHARACTERISTICS
(TYPICAL)
Tj = 125°C
2000
1600
1200
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8V
800
2400
TRANSFER CHARACTERISTICS
(TYPICAL)
VCE = 20V
2000
1600
1200
800
400
0
0
1
2
3
4
5
6
COLLECTOR-EMITTER VOLTAGE (V)
400
0
0
Tj = 25°C
Tj = 125°C
2
4
6
8
10 12
GATE-EMITTER VOLTAGE (V)
2400
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
VGE = 15V
2000
1600
1200
800
400
Tj = 25°C
Tj = 125°C
0
0
1
2
3
4
5
6
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
2400
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
2000
1600
1200
800
400
0
0
Tj = 25°C
Tj = 125°C
1
2
3
4
5
6
EMITTER-COLLECTOR VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
4
May 2009