CM1200HG-66H_09 Datasheet, PDF (5/7 Pages) Mitsubishi Electric Semiconductor – HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10³
7
5
3
2
Cies
10²
7
5
3
2
10¹
7
5
3
2 ^{VGE = 0V, Tj = 25°C}
f = 100kHz
101⁰_{0-1 2 3 5 7100 2 3}
5 710¹
Coes
Cres
2 3 5 710²
COLLECTOR-EMITTER VOLTAGE (V)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCE = 1650V, IC = 1200A
Tj = 25°C
15
10
5
0
-5
-10
-15
0
5000
10000 15000
GATE CHARGE (µC)
20000
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS
(TYPICAL)
3
VCC = 1650V, VGE = ±15V
Eon
RG = 1.6Ω, Tj = 125°C
2.5 ^{Inductive load}
2
Eoff
1.5
1
Erec
0.5
0
0 400 800 1200 1600 2000 2400
COLLECTOR CURRENT (A)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS
(TYPICAL)
6
VCC = 1650V, IC = 1200A
VGE = ±15V, Tj = 125°C
5 ^{Inductive load}
Eon
4
3
Eoff
2
1
Erec
0
0
5
10
15
20
GATE RESISTOR (Ω)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
5
May 2009