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CM1200HG-66H Datasheet, PDF (7/7 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
3000
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
VCC ⤠2200V, VGE = +/-15V
Tj = 125°C, RG(off) ⥠1.6â¦
2500
2000
1500
1000
500
0
0
1000
2000
3000
4000
COLLECTOR-EMITTER VOLTAGE (V)
3000
FREE-WHEEL DIODE REVERSE
RECOVERY SAFE OPERATING AREA
(RRSOA)
VCC ⤠2200V, di/dt ⤠5400A/µs
Tj = 125°C
2500
2000
1500
1000
500
0
0
1000
2000
3000
4000
EMITTER-COLLECTOR VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
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