CM1200HG-66H Datasheet, PDF (6/7 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
10²
7 VCC = 1650V, VGE = ±15V
5 ^{RG(on) = RG(off) = 1.6Ω}
Tj = 125°C, Inductive load
3
2
10¹
7
5
3
td(off)
2
10⁰
td(on)
7
5
tr
3
2
tf
10^-₁¹ _{01 2 3 5 7102 2 3 5 7103 2 3 5 7104}
COLLECTOR CURRENT (A)
FREE-WHEEL DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10²
10⁴
7 ^{VCC = 1650V, VGE = ±15V}
7
5 ^{RG(on) = RG(off) = 1.6Ω}
5
Tj = 125°C, Inductive load
3
3
2
2
10¹
10³
7
Irr
7
5
5
3
3
2
2
10⁰
10²
7
7
5
trr
5
3
3
2
2
10^-₁¹ ₀₁
23
5 710²
23
5 710³
23
10¹
5 710⁴
EMITTER CURRENT (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
1.2
Single Pulse, TC = 25°C
Rth(j–c)Q = 10K/kW
1.0 ^{Rth(j–c)R = 20K/kW}
0.8
0.6
0.4
0.2
010_{-3 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101}
TIME (s)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005