CM1200HG-66H Datasheet, PDF (1/7 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI HVIGBT MODULES
CM1200HG-66H
HIGH POWER SWITCHING USE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM1200HG-66H
q IC ................................................................ 1200A
q VCES ....................................................... 3300V
q High Insulated Type
q 1-element in a Pack
q AISiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57±0.25
190±0.5
57±0.25
57±0.25
5 - M8 NUTS
6
4
3 - M4 NUTS
screwing depth
min. 7.7
5
E
G
3
C
14±0.3
59.2±0.5
61.2±0.5
61.2±0.5
12±0.3
(6)
(4)
(2)
C
C
C
2
C
G
1
E
8 - φ 7 MOUNTING HOLES
18±0.3
screwing depth
min. 16.5
E
E
E
(5)
(3)
(1)
CIRCUIT DIAGRAM
41±0.5
22±0.3
LABEL
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005