CM1200HC-90R Datasheet, PDF (7/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1200HC-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
SHORT CIRCUIT
SAFE OPERATING AREA (SCSOA)
12
V_CC  32 00V, V_GE = ±1 5V
Tj = 1 25° C, R _G(on) = 2.7Ω, R_{G( off)} = 1 0Ω
10
8
6
4
2
0
0
1000 2000 3000 4000 5000
Collector-Emitter Vol tage [V]
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA (RRSOA)
30 00
25 00
VCC  32 00 V, di /d t < 6 kA/µs
Tj = 125 °C
20 00
15 00
10 00
5 00
0
0
1000 2000 3000 4000 5000
Emitte r-Collector Voltage [V]
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.2
Rth(j-c)Q = 10 .0 K/kW
Rth(j-c)R = 1 9.0K/kW
1
0.8
0.6
0.4
0.2
0
0. 001
0.0 1
0.1
1
10
Ti me [s]
Z  R 1exp n
th( j c ) ^{( t ) }
i 1

i


^



t
i
^{}

Ri [K/kW] :
t_i [sec] :
1
0.0096
0.0001
2
0.1893
0.0058
3
0.4044
0.0602
4
0.3967
0.3512
December 2012 _HVM-1057-E
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