CM1200HC-90R Datasheet, PDF (1/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1200HC-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM1200HC-90R
 I 1200A _{C ································································}
 V 4500V _{CES ··························································}
 1-element in a pack
 Insulated type
 LPT-IGBT / Soft Recovery Diode
 AlSiC baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
November 2012 _HVM-1057-E
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