CM1200HC-90R Datasheet, PDF (2/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

< HVIGBT MODULES >
CM1200HC-90R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol
Item
VCES
Collector-emitter voltage
VGES
IC
ICRM
IE
IERM
Ptot
Viso
Ve
Tj
Tjop
Tstg
tpsc
Gate-emitter voltage
Collector current
Emitter current
(Note 2)
Maximum power dissipation (Note 3)
Isolation voltage
Partial discharge extinction voltage
Junction temperature
Operating junction temperature
Storage temperature
Short circuit pulse width
Conditions
VGE = 0V, Tj = −40…+125°C
VGE = 0V, Tj = −50°C
VCE = 0V, Tj = 25°C
DC, Tc = 85°C
Pulse ^{(Note 1)}
DC
Pulse ^{(Note 1)}
Tc = 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1 min.
RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC
VCC = 3200V, VCE ≤ VCES, VGE =15V, Tj =125°C
Ratings
Unit
4500
4400
V
±20
V
1200
A
2400
A
1200
A
2400
A
12500
W
6000
V
3500
V
−50 ~ +150
°C
−50 ~ +125
°C
−55 ~ +125
°C
10
s
ELECTRICAL CHARACTERISTICS
Symbol
Item
Conditions
Limits
Min Typ Max
Unit
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
Tj = 25°C
Tj = 125°C
―
―
― 16.0
16.0 ―
mA
VGE(th)
Gate-emitter threshold voltage
VCE = 10 V, IC = 120 mA, Tj = 25°C
5.8 6.3 6.8
V
IGES
Gate leakage current
VGE = VGES, VCE = 0V, Tj = 25°C
−0.5 ―
0.5
µA
Cies
Coes
Cres
QG
VCEsat
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 10 V, VGE = 0 V, f = 100 kHz
Tj = 25°C
― 175.0 ―
nF
― 11.0 ―
nF
―
5.0
―
nF
Total gate charge
VCC = 2800V, IC = 1200A, VGE = ±15V
― 13.5 ―
µC
Collector-emitter saturation voltage
IC = 1200 A ^{(Note 4)}
VGE = 15 V
Tj = 25°C
― 3.50 ―
Tj = 125°C ― 4.40 5.10
V
td(on)
tr
Eon(10%)
Eon
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-on switching energy
(Note 5)
(Note 6)
VCC = 2800 V
IC = 1200 A
VGE = ±15 V
RG(on) = 2.7 Ω
Ls = 150 nH
Inductive load
Tj = 25°C
Tj = 125°C
―
―
1.00 ―
0.95 1.50
µs
Tj = 25°C
Tj = 125°C
―
―
0.28 ―
0.30 0.50
µs
Tj = 25°C
― 4.30 ―
Tj = 125°C ― 5.10 ―
J
Tj = 25°C
― 4.60 ―
Tj = 125°C ― 5.50 ―
J/P
td(off)
tf
Eoff(10%)
Eoff
Turn-off delay time
Turn-off fall time
Turn-off switching energy
Turn-off switching energy
(Note 5)
(Note 6)
VCC = 2800 V
IC = 1200 A
VGE = ±15 V
RG(off) = 10 Ω
Ls = 150 nH
Inductive load
Tj = 25°C
Tj = 125°C
―
―
3.60 ―
3.80 5.00
µs
Tj = 25°C
Tj = 125°C
―
―
0.35 ―
0.45 1.00
µs
Tj = 25°C
― 2.90 ―
Tj = 125°C ― 3.85 ―
J
Tj = 25°C
― 3.20 ―
Tj = 125°C ― 4.30 ―
J
December 2012 _HVM-1057-E
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