CM1000HC-66R Datasheet, PDF (7/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

< HVIGBT MODULES >
CM1000HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
100
V_CC = 18 00 V, V_GE = ± 15V
R_G(on) = 2.4Ω, L_S = 150 nH
Tj = 1 25°C, In ductive l oa d
10000
10
Irr
1000
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
100
V_CC = 18 00 V, V_GE = ± 15V
R_G(on) = 2.4Ω, L_S = 150 nH
Tj = 1 50°C, In ductive l oa d
10000
10
Irr
1000
1
trr
100
1
trr
100
0.1
100
1000
Emitter Current [A]
10
10 00 0
0.1
100
1000
Emitter Current [A]
10
10 00 0
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.2
R _{th(j-c )Q} = 12 .0 K/kW
R _{th(j-c )D} = 22.5K/kW
1
0.8
0.6
0.4
0.2
0
0. 001
0.01
0.1
1
10
Time [s]
Z  R 1exp n
th( jc) ^{(t) }
i1

i


 ^{ }
 _

t


 ^{ i }

R_i [K/kW] :
_i [sec] :
1
0.0096
0.0001
2
0.1893
0.0058
3
0.4044
0.0602
4
0.3967
0.3512
December 2012 _(HVM-1061-B)
7