CM1000HC-66R Datasheet, PDF (6/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1000HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
7
VCC = 180 0V, IC = 10 00A
6
VGE = ±15 V, L_S = 15 0nH
Tj = 12 5°C , Indu cti ve lo ad
5
4
Eon
3
Eo ff
2
1
Erec
0
0
5
10
15
20
Gate resistor [Ohm]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
7
VCC = 180 0V, IC = 10 00A
6
VGE = ±15 V, L_S = 15 0nH
Tj = 15 0°C , Indu cti ve lo ad
5
Eon
4
3
Eoff
2
1
Ere c
0
0
5
10
15
20
Gate resistor [Ohm]
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS (TYPICAL)
100
10
V_CC = 18 00 V, V_GE = ± 15V
R _G(on) = 2.4Ω, R_{G( off)} = 8 .4 Ω
L _S = 1 50n H, Tj = 1 25° C
In ductive l oa d
1
tf
td(o ff)
td (on)
0.1
tr
0.01
100
1000
Collector Current [A]
10000
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS (TYPICAL)
100
10
V_CC = 18 00 V, V_GE = ± 15V
R _G(on) = 2.4Ω, R_{G( off)} = 8 .4 Ω
L _S = 1 50n H, Tj = 1 50° C
In ductive l oa d
1
tr
td(o ff)
td(o n)
0.1
tf
0.01
100
1000
Collector Current [A]
10000
December 2012 _(HVM-1061-B)
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