CM1000HC-66R Datasheet, PDF (2/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1000HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol
V_CES
V_GES
I_C
I_CRM
I_E
I_ERM
P_tot
V_iso
V_e
T_j
T_jop
T_stg
t_psc
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
(Note 2)
Maximum power dissipation (Note 3)
Isolation voltage
Partial discharge extinction voltage
Junction temperature
Operating junction temperature
Storage temperature
Short circuit pulse width
Conditions
V_GE = 0V, T_j = -40…+150°C
V_GE = 0V, T_j = −50°C
V_CE = 0V, T_j = 25°C
DC, T_c = 95°C
Pulse ^{(Note 1)}
DC
Pulse ^{(Note 1)}
T_c = 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1 min.
RMS, sinusoidal, f = 60Hz, Q_PD ≤ 10 pC
V_CC = 2500V, V_CE ≤ V_CES, V_GE =15V, T_j =150°C
Ratings
Unit
3300
3200
V
± 20
V
1000
A
2000
A
1000
A
2000
A
10400
W
6000
V
2600
V
−50 ~ +150
°C
−50 ~ +150
°C
−55 ~ +150
°C
10
s
ELECTRICAL CHARACTERISTICS
Symbol
Item
Conditions
Limits
Min Typ Max
Unit
I_CES
V_GE(th)
I_GES
C_ies
C_oes
C_res
Q_G
V_CEsat
t_d(on)
t_r
E_on(10%)
E_on
t_d(off)
t_f
E_off(10%)
E_off
T_j = 25°C
—
—
4.0
Collector cutoff current
V_CE = V_CES, V_GE = 0V
T_j = 125°C —
4.0
—
mA
T_j = 150°C — 24.0 —
Gate-emitter threshold voltage
V_CE = 10 V, I_C = 100 mA, T_j = 25°C
5.7 6.2 6.7
V
Gate leakage current
V_GE = V_GES, V_CE = 0V, T_j = 25°C
−0.5 —
0.5
µA
Input capacitance
Output capacitance
Reverse transfer capacitance
V_CE = 10 V, V_GE = 0 V, f = 100 kHz
T_j = 25°C
— 140.0 —
nF
—
8.7
—
nF
—
4.0
—
nF
Total gate charge
V_CC = 1800V, I_C = 1000A, V_GE = ±15V
— 10.7 —
µC
Collector-emitter saturation voltage
I_C = 1000 A ^{(Note 4)}
V_GE = 15 V
T_j = 25°C
— 2.45 —
T_j = 125°C — 3.10 3.70
V
T_j = 150°C — 3.25 —
T_j = 25°C
— 1.00 —
Turn-on delay time
T_j = 125°C — 0.95 1.25 µs
T_j = 150°C — 0.95 1.25
Turn-on rise time
V_CC = 1800 V
I_C = 1000 A
T_j = 25°C
— 0.28 —
T_j = 125°C — 0.30 0.50 µs
V_GE = ±15 V
T_j = 150°C — 0.30 0.50
Turn-on switching energy
(Note 5)
R_G(on) = 2.4 Ω
L_s = 150 nH
Inductive load
T_j = 25°C
— 1.40 —
T_j = 125°C — 1.85 —
J
T_j = 150°C — 2.00 —
Turn-on switching energy
(Note 6)
T_j = 25°C
— 1.50 —
T_j = 125°C — 1.95 —
J
T_j = 150°C — 2.15 —
T_j = 25°C
— 2.70 —
Turn-off delay time
T_j = 125°C — 2.80 3.30 µs
T_j = 150°C
2.85 3.30
Turn-off fall time
V_CC = 1800 V
I_C = 1000 A
T_j = 25°C
— 0.30 —
T_j = 125°C — 0.35 1.00 µs
V_GE = ±15 V
T_j = 150°C — 0.40 1.00
Turn-off switching energy
(Note 5)
R_G(off) = 8.4 Ω
L_s = 150 nH
Inductive load
T_j = 25°C
— 1.35 —
T_j = 125°C — 1.65 —
J
T_j = 150°C
1.70 —
Turn-off switching energy ^{(Note 6)}
T_j = 25°C
— 1.50 —
T_j = 125°C — 1.80 —
J
T_j = 150°C — 1.90 —
December 2012 _(HVM-1061-B)
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