CM75RX-24S Datasheet, PDF (6/13 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM75RX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT
V_GE=15 V
34
V
33
Short-
circuited
30
29
35
IC
V_GE=15 V
26
V
25
1
Short-
circuited
22
36
21
35
IC
V_GE=15 V
18
V
17
2
Short-
circuited
14
36
13
35
IC
3
36
P
Short-
circuited
GUP
Es UP
V
U
V_GE=15 V
GUN
I_C
E s UN
N
Gate-emitter GVP-EsVP GVN-EsVN,
short-circuited GWP-EsWP, GWN-EsWN,
GB-EsB
UP / UN IGBT
P
Short-
circuited
GVP
P
Short-
circuited
GWP
Es VP
V
V
Es WP
V
W
V_GE=15 V
GVN
I_C
V_GE=15 V
GWN
I_C
EsVN
N
EsWN
N
Gate-emitter GUP-EsUP, GUN-EsUN,
short-circuited GWP-EsWP, GWN-EsWN,
GB-EsB
VP / VN IGBT
Gate-emitter GUP-EsUP, GUN-EsUN,
short-circuited GVP-EsVP, GVN-EsVN,
GB-EsB
WP / WN IGBT
VCEsat test circuit
P
VGE=15 V
GB
EsB
V
B
I_C
N
Gate-emitter GUP-EsUP, GUN-EsUN,
short-circuited GVP-EsVP, GVN-EsVN,
GWP-EsWP, GWN-EsWN
Brake IGBT
Short-
circuited
34
V
33
Short-
circuited
30
29
35
Short-
IE
ci rcuited
26
1
V
25
Short-
ci rcuited
22
36
21
35
Short-
IE
ci rcuited
18
2
V
17
Short-
ci rcuited
14
36
13
35
IE
3
S hort-
circui ted
6
36
5
35
I_F
4
V
36
P
Short-
circuited
GUP
Es UP
V
U
Short-
circuited
I_E
GUN
E s UN
N
Gate-emitter GVP-EsVP GVN-EsVN,
short-circuited GWP-EsWP, GWN-EsWN,
GB-EsB
UP / UN FWDi
Short-
circuited
GVP
Es VP
Short-
circuited
GVN
P
P
Short-
circuited
GWP
V
Es WP
V
V
W
Short-
I_E
circuited
I_E
GWN
EsVN
N
EsWN
N
Gate-emitter GUP-EsUP, GUN-EsUN,
short-circuited GWP-EsWP, GWN-EsWN,
GB-EsB
VP / VN FWDi
Gate-emitter GUP-EsUP, GUN-EsUN,
short-circuited GVP-EsVP, GVN-EsVN,
GB-EsB
WP / WN FWDi
VEC / VF test circuit
Gate-emitter GUP-EsUP, GUN-EsUN,
short-circuited GVP-EsVP, GVN-EsVN,
GWP-EsWP, GWN-EsWN
Brake ClampDi
Publication Date : September 2012
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