CM75RX-24S Datasheet, PDF (5/13 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM75RX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
RECOMMENDED OPERATING CONDITIONS
Symbol
Item
V_CC
V_GEon
(DC) Supply voltage
Gate (-emitter drive) voltage
R_G
External gate resistance
CHIP LOCATION (Top view)
Conditions
Limits
Unit
Min.
Typ.
Max.
Applied across P-N terminals
-
600
850
V
Applied across GB-EsB/
G*P-Es*P/G*N-Es*N (*=U, V, W) terminals
13.5
15.0
16.5
V
Per switch
Inverter IGBT 8.2
-
82
Ω
Brake IGBT 13
-
130
Dimension in mm, tolerance: ±1 mm
Tr*P/Tr*N/TrBr: IGBT, Di*P/Di*N: FWDi (*=U/V/W), DiBr: ClampDi, Th: NTC thermistor
TEST CIRCUIT AND WAVEFORMS
i_E
vGE
*:U, V, W
P
90 %
-V_GE
G*P
Es*P
Load
*
0V
+ VCC
i_C
+VGE
0V
-V_GE
R_G
v_GE ^G*N
Es*N
v_{C E}
i_C
N
0A
t_{d(o n)}
t_r
t_{d (off)}
Switching characteristics test circuit and waveforms
0
t
90 %
10%
t_f
t
i_E
I_E
0A
I_rr
Q _rr=0.5×I_{r r} ×t_{r r}
t_rr
t
0.5 ×I _{r r}
trr, Qrr test waveform
I_CM
v_CE
i_C
V_CC
i_C
V_CC
I_CM
v_CE
i_E
I_EM
0A
v_EC
V_CC
t
0.1×I_CM
0
0.1×V_CC
t
t_i
IGBT Turn-on switching energy
0.1×V_CC
0
0.02×I_{CM t}
t_i
IGBT Turn-off switching energy
0V
t
t_i
FWDi Reverse recovery energy
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
Publication Date : September 2012
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