CM75RX-24S Datasheet, PDF (11/13 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

< IGBT MODULES >
CM75RX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
BRAKE PART
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V_CC=600 V, V_GE=±15 V, R_G=13 Ω,
INDUCTIVE LOAD, PER PULSE
---------------: T_j =150 °C, - - - - -: T_j =125 °C
10
100
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V_CC=600 V, I_C/I_F=50 A, V_GE=±15 V,
INDUCTIVE LOAD, PER PULSE
---------------: T_j =150 °C, - - - - -: T_j =125 °C
100
E_off
1
E_on
10
E_rr
0.1
1
1
10
100
COLLECTOR CURRENT I_C (A)
FORWARD CURRENT I_F (A)
CLAMP DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
V_CC=600 V, V_GE=±15 V, R_G=13 Ω, INDUCTIVE LOAD
---------------: T_j =150 °C, - - - - -: T_j =125 °C
1000
E_on
10
E_off
E_rr
1
10
100
1000
EXTERNAL GATE RESISTANCE R_G (Ω)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
(MAXIMUM)
Single pulse, T_C=25 °C
R _{t h ( j - c ) Q} =0.35 K/W, R _{t h ( j - c ) D} =0.63 K/W
1
100
t_rr
I_rr
0.1
0.01
10
1
10
FORWARD CURRENT I_F (A)
Publication Date : September 2012
100
11
0.001
0.00001 0.0001 0.001
0.01
0.1
1
10
TIME (S)