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CM600HA-24A Datasheet, PDF (6/8 Pages) Powerex Power Semiconductors – Single IGBTMOD™ A-Series Module 600 Amperes/1200 Volts
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HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=0.52 Ω, T j =125 °C
INDUCTIVE LOAD
1000
td(off)
tf
td(on)
100
tr
MITSUBISHI IGBT MODULES
CM600HA-24A
HIGH POWER SWITCHING USE
INSULATED TYPE
FREE WHEELING DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=0.52 Ω, T j =125 °C
INDUCTIVE LOAD
1000
Irr
100
trr
10
10
100
1000
COLLECTOR CURRENT IC (A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=0.52 Ω, T j =125 °C
INDUCTIVE LOAD, PER PULSE
100
10
10
100
1000
EMITTER CURRENT IE (A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, IC/IE=600 A, VGE=±15 V, T j =125 °C
INDUCTIVE LOAD, PER PULSE
1000
Err
Eoff
10
Eon
1
10
100
1000
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
6
100
Eon
Eoff
Err
10
0.1
1
10
EXTERNAL GATE RESISTANCE RG (Ω)
January-2011
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