CM600HA-24A Datasheet, PDF (3/8 Pages) Powerex Power Semiconductors – Single IGBTMOD™ A-Series Module 600 Amperes/1200 Volts

MITSUBISHI IGBT MODULES
CM600HA-24A
HIGH POWER SWITCHING USE
INSULATED TYPE
çç
Note.1: Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
Note.2: Case temperature (T_C) and heat sink temperature (T _s ) are defined on the each surface of base plate and heat sink
just under the chips. (Refer to the figure of chip location)
The heat sink thermal resistance {R _{t h( s - a)} } should measure just under the chips.
Note.3: Pulse width and repetition rate should be such that the device junction temperature (T _j ) dose not exceed T _{j m a x} rating.
Note.4: Junction temperature (T _j ) should not increase beyond T _{j m a x} rating.
Note.5: Base plate flatness measurement point is as in the following figure.
Bottom
X
Y
Bottom
-: Concave
Bottom
+: Convex
Note.6: Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Refer to the figure of test circuit)
Note.7: Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
CHIP LOCATION (Top view)
Dimension in mm, tolerance: ±1 mm
Tr1: IGBT, Di1: FWDi. Each mark points the center position of each chip.
3
January-2011