CM600HA-24A Datasheet, PDF (5/8 Pages) Powerex Power Semiconductors – Single IGBTMOD™ A-Series Module 600 Amperes/1200 Volts

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PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
T _j =25 °C
1200
V_GE=20 V
13 V
1000 ^{15 V}
12 V
800
600
11 V
400
10 V
200
9V
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE V_CE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
T _j =25 °C
10
8
I_C=1200 A
I_C=600 A
6
I_C=240 A
4
2
0
6
8
10
12
14
16
18
20
GATE-EMITTER VOLTAGE V_GE (V)
MITSUBISHI IGBT MODULES
CM600HA-24A
HIGH POWER SWITCHING USE
INSULATED TYPE
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
V_GE=15 V
4
T _j =125 °C
3
2
T _j =25 °C
1
0
0
200
400
600
800
1000
1200
COLLECTOR CURRENT I_C (A)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
G-E short-circuited
10000
1000
T _j =125 °C
T _j =25 °C
100
10
0
1
2
3
4
5
EMITTER-COLLECTOR VOLTAGE V_EC (V)
5
January-2011
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