CM400HX-24A Datasheet, PDF (6/6 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

MITSUBISHI IGBT MODULES
CM400HX-24A
HIGH POWER SWITCHING USE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
10⁴
7 ^Conditions:
VCC = 600V
5 _{VGE = ±15V}
3 IC = 400A
2 ^{Tj = 125°C}
Inductive load
td(on)
10³
7
td(off)
5
tr
3
tf
2
101²_{0–1 2 3 5 7 100 2 3 5 7 101}
GATE RESISTANCE RG (Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
10³
7
5
3
2
10²
7
Eon
5
Eoff
3
2
Err
Conditions:
10¹
7
5
VCC = 600V
VGE = ±15V
3 ^{IC, IE = 400A}
2 ^{Tj = 125°C}
Inductive load
101⁰_{0–1 2 3 5 7 100}
23
5 7 10¹
GATE RESISTANCE RG (Ω)
GATE CHARGE CHARACTERISTICS
(TYPICAL) Inverter part
20
IC = 400A
VCC = 400V
15
VCC = 600V
10
5
0
0 500 1000 1500 2000 2500 3000
GATE CHARGE QG (nC)
6
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
10²
7
5
3
2
10¹
7
5
3
2
101⁰ ₀₁
Eoff
Eon
Err
2 3 5 7 10²
Conditions:
VCC = 600V
VGE = ±15V
RG = 0.75Ω
Tj = 125°C
Inductive load
2 3 5 7 10³
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE WHEELING DIODE
(TYPICAL) Inverter part
10³
7
5
3
2
trr
10²
Irr
7
5
3
2
10¹
7
5
3
2
101⁰ ₀₁
23
5 7 10²
Conditions:
VCC = 600V
VGE = ±15V
RG = 0.75Ω
Tj = 25°C
Inductive load
2 3 5 7 10³
EMITTER CURRENT IE (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
10⁰
7 Single pulse,
5 _{TC = 25°C}
3
2
10^–1
7
5
3
2
10^–2
7
5
3
2 ^{Inverter IGBT part : Per unit base = Rth(j–c) = 0.051K/W}
Inverter FWDi part : Per unit base = Rth(j–c) = 0.093K/W
10^–3
10^–52 3 5710^–42 3 5710^–32 3 5710^–22 3 5710^–12 3 5710⁰ 2 3 5710¹
TIME (s)
Jan. 2009