CM400HX-24A Datasheet, PDF (3/6 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

MITSUBISHI IGBT MODULES
CM400HX-24A
HIGH POWER SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
INVERTER PART
Symbol
Parameter
Conditions
ICES
VGE(th)
IGES
Collector cutoff current
VCE = VCES, VGE = 0V
Gate-emitter threshold voltage IC = 40mA, VCE = 10V
Gate leakage current
±VGE = VGES, VCE = 0V
VCE(sat) Collector-emitter saturation voltage
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer capacitance
QG
Total gate charge
td(on)
Turn-on delay time
tr
Turn-on rise time
td(off)
Turn-off delay time
tf
Turn-off fall time
trr (Note.3) Reverse recovery time
Qrr (Note.3) Reverse recovery charge
IC = 400A, VGE = 15V
(Note. 6)
IC = 400A, VGE = 15V
VCE = 10V
VGE = 0V
VCC = 600V, IC = 400A, VGE = 15V
VCC = 600V, IC = 400A
VGE = ±15V, RG = 0.75Ω
Inductive load
(IE = 400A)
VEC(Note.3) Emitter-collector voltage
Rlead
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
RGint
RG
Module lead resistance
Thermal resistance
(Junction to case) (Note. 1)
Contact thermal resistance
(Case to heat sink) (Note. 1)
Internal gate resistance
External gate resistance
IE = 400A, VGE = 0V
IE = 400A, VGE = 0V
Main terminals-chip
per IGBT
per free wheeling diode
Thermal grease applied
TC = 25°C
TC = 125°C
(Note. 6)
Tj = 25°C
Tj = 125°C
Chip
(Note. 6)
Tj = 25°C
Tj = 125°C
Chip
(Note. 2)
Min.
—
6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.1
4.2
0.75
Limits
Typ.
Max. ^Unit
—
1
mA
7
8
V
—
0.5
μA
2.0
2.6
2.2
—
V
1.9
—
—
66
—
6.0
nF
—
1.3
2000
—
nC
—
660
—
190
—
700
ns
—
600
—
250
13
—
μC
2.6
3.4
2.16
—
V
2.5
—
0.6
—
mΩ
—
0.033
—
0.048 _K/W
0.015
—
3
3.9
6
7.8
Ω
—
7.8
NTC THERMISTOR PART
Symbol
Parameter
R
ΔR/R
B(25/50)
P25
Zero power resistance
Deviation of resistance
B constant
Power dissipation
Conditions
TC = 25°C
TC = 100°C, R100 = 493Ω
Approximate by equation
TC = 25°C
Min.
4.85
–7.3
(Note. 7) —
—
Limits
Typ.
5.00
—
3375
—
Max.
5.15
+7.8
—
10
Note.1: Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. (Refer to the figure of the chip location.)
2: Typical value is measured by using thermally conductive grease of λ = 0.9W/(m·K).
3: IE, IERM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
4: Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not exceed Tjmax rating.
5: Junction temperature (Tj) should not increase beyond 150°C.
6: Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Refer to the figure of the test circuit for VCE(sat) and VEC)
7:
B(25/50)
=
In(
R25
R50
)/(
1
T25
1)
T50
R25: resistance at absolute temperature T25 [K]; T25 = 25 [°C]+273.15 = 298.15 [K]
R50: resistance at absolute temperature T50 [K]; T50 = 50 [°C]+273.15 = 323.15 [K]
Unit
kΩ
%
K
mW
Jan. 2009
3