CM400HX-24A Datasheet, PDF (4/6 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

Chip Location (Top view)
MITSUBISHI IGBT MODULES
CM400HX-24A
HIGH POWER SWITCHING USE
Dimensions in mm (tolerance: ±1mm)
(152)
(121.7)
(110)
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
47
Tr Di
24
Tr Di
48
23
Th
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
0
21.8
35.2
45.0
LABEL SIDE
Each mark points the center position of each chip. Tr: IGBT, Di: FWDi, Th: NTC thermistor
C(Cs)
V ^{VGE = 15V}
G
E(Es)
C
IC
E
VCE(sat) test circuit
C(Cs)
V ^{VGE = 0V}
G
E(Es)
C
IE
E
VEC test circuit
–VGE
+VGE
0V
–VGE
RG
VGE
Load
IE
VGE
0V
+ VCC
IC
90%
IE
0%
90%
0A
VCE
IC
0A
td(on)
tr
td(off)
Switching time test circuit and waveforms
10%
tf
trr
t
Irr
1/2 ✕ Irr
Qrr = 1/2 ✕ Irr ✕ trr
trr, Qrr test waveform
Jan. 2009
4