English
Language : 

CM200DY-34A_11 Datasheet, PDF (6/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE
◁
< IGBT MODULES >
CM200DY-34A
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=1000 V, VGE=±15 V, RG=2.4 Ω,
Tj =125 °C, INDUCTIVE LOAD
1000
tf
td(on)
td(off)
100
tr
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=1000 V, IC=200 A, VGE=±15 V,
Tj =125 °C, INDUCTIVE LOAD
10000
1000
td(off)
td(on)
tr
tf
10
10
100
1000
COLLECTOR CURRENT IC (A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=1000 V, VGE=±15 V, RG=2.4 Ω, T j =125 °C
INDUCTIVE LOAD, PER PULSE
100
1000
Eon
Eoff
10
100
Err
100
1
10
100
EXTERNAL GATE RESISTANCE RG (Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=1000 V, IC/IE=200 A, VGE=±15 V, T j =125 °C
INDUCTIVE LOAD, PER PULSE
1000
Eon
100
Eoff
Err
1
10
10
100
1000
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
Publication Date : June.2011
6
10
1
10
100
EXTERNAL GATE RESISTANCE RG (Ω)
 ▷