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CM200DY-34A_11 Datasheet, PDF (5/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE
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CM200DY-34A
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
T j =25 °C
400
VGE=20 V
15 V
13 V
12 V
300
11 V
200
10 V
100
8V
9V
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
T j =25 °C
10
8
IC=400 A
IC=200 A
6
IC=80 A
4
2
0
5
10
15
20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
VGE=15 V
4
3
Tj =125 °C
2
T j =25 °C
1
0
0
100
200
300
400
COLLECTOR CURRENT IC (A)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
G-E short-circuited
1000
Tj =125 °C
100
T j =25 °C
10
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
EMITTER-COLLECTOR VOLTAGE VEC (V)
Publication Date : June.2011
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