CM200DY-34A_11 Datasheet, PDF (2/8 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM200DY-34A
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (T_j=25 °C, unless otherwise specified)
Symbol
Item
Conditions
V_CES
Collector-emitter voltage
G-E short-circuited
V_GES
I_C
I_CRM
P_tot
I_E
I_ERM
(Note.1)
(Note.1)
T_j
T_stg
Gate-emitter voltage
Collector current
Total power dissipation
Emitter current
Junction temperature
Storage temperature
C-E short-circuited
DC, T_C=109 °C ^{(Note.2, 4)}
Pulse, Repetitive ^(Note.3)
T_C=25 °C ^{(Note.2, 4)}
T_C=25 °C ^{(Note.2, 4)}
Pulse, Repetitive ^(Note.3)
-
-
V_isol
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
ELECTRICAL CHARACTERISTICS (T _j =25 °C, unless otherwise specified)
Symbol
Item
I_CES
I_GES
V_GE(th)
V_CEsat
Collector-emitter cut-off current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
C_ies
C_oes
C_res
Q_G
t_d(on)
t_r
t_d(off)
t_f
V ^(Note.1)
EC
t (Note.1)
rr
Q (Note.1)
rr
E_on
E_off
E ^(Note.1)
rr
r_g
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Turn-on switching energy per pulse
Turn-off switching energy per pulse
Reverse recovery energy per pulse
Internal gate resistance
THERMAL RESISTANCE CHARACTERISTICS
Conditions
V_CE=V_CES, G-E short-circuited
V_GE=V_GES, C-E short-circuited
I_C=20 mA, V_CE=10 V
I_C=200 A , ^(Note.5)
V_GE=15 V
T _j =25 °C
T _j =125 °C
V_CE=10 V, G-E short-circuited
V_CC=1000 V, I_C=200 A, V_GE=15 V
V_CC=1000 V, I_C=200 A, V_GE=±15 V,
R_G=2.4 Ω, Inductive load
I_E=200 A ^(Note.5) , G-E short-circuited
V_CC=1000 V, I_E=200 A, V_GE=±15 V,
R_G=2.4 Ω, Inductive load
V_CC=1000 V, I_C=I_E=200 A,
V_GE=±15 V, R_G=2.4 Ω, T _j =125 °C,
Inductive load
Per switch, T _c =25 °C
Min.
-
-
5.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Symbol
R_th(j-c)Q
R_th(j-c)D
R_th(c-s)
Item
Thermal resistance ^(Note.2)
Contact thermal resistance ^(Note.2)
Conditions
Junction to case, per IGBT
Junction to case, per FWDi
Case to heat sink, per 1/2 module,
Thermal grease applied ^(Note.6)
Min.
-
-
-
MECHANICAL CHARACTERISTICS
Symbol
M_t
M_s
m
e_c
Item
Mounting torque
Weight
Flatness of base plate
Conditions
Main terminals
Mounting to heat sink
-
On the centerline X, Y
(Note.7)
M 6 screw
M 6 screw
Min.
3.5
3.5
-
-100
Rating
Unit
1700
V
±20
V
200
A
400
1980
W
200
A
400
-40 ~ +150
°C
-40 ~ +125
3500
V
Limits
Unit
Typ.
Max.
-
1.0
mA
-
2.0
μA
7.0
8.5
V
2.2
2.8
V
2.45
-
-
49.4
-
5.6
nF
-
1.06
1330
-
nC
-
550
-
190
ns
-
750
-
350
2.3
3.0
V
-
450
ns
20
-
μC
94.5
-
mJ
58.7
-
50.7
-
mJ
3.0
-
Ω
Limits
Unit
Typ.
Max.
-
0.063 K/W
-
0.11
K/W
0.02
-
K/W
Limits
Unit
Typ.
Max.
4.0
4.5
N·m
4.0
4.5
N·m
400
-
g
-
+100
μm
Publication Date : June.2011
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